Gallium Arsenide Power Supply Gallium Arsenide Power Supply
Gallium Arsenide Power Supply
Gallium Arsenide Power Supply

Gallium Arsenide Power Supply

9150.00 - 11400.00 USD ($)/Set

Product Details:

  • Product Type Bridge Rectifier
  • Application electroplating
  • Input Voltage 380V;415V;440V;480V Volt (V)
  • Output Current 6000 Ampere (amp)
  • Output Voltage 16 Volt (V)
  • Modular Modular
  • Interface Type RS485,0-10V;4-20ma
  • Supply Ability : 300 Set Per Month
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Price And Quantity

  • 9150.00 - 11400.00 USD ($)/Set
  • 1 Set

Product Specifications

  • RS485,0-10V;4-20ma
  • 6000 Ampere (amp)
  • Modular
  • Bridge Rectifier
  • 1 year
  • 16 Volt (V)
  • 380V;415V;440V;480V Volt (V)
  • electroplating
  • HMI

Trade Information

  • Shanghai,Tianjing,beijing,Guangzhou
  • 300 Set Per Month
  • 6-8 Week
  • Contact us for information regarding our sample policy
  • Polywood package
  • CE

Product Description

We have developed high voltage GaAs Power Supply Mass Production device that successfully moves to mass- production. The device performance of high voltage GaAs devices from mass-production line is well controlled. Mono crystal by 6 temperature sections this power supply has 6 modules; poly crystal by 9 temperature sections and power supply with 9 modules. Each module is independent and has accurate control.

Gas Gallium Arsenide Power Supply Mass Production

The output of the circuit breaker QF1 is connected to the primary side of the three-phase transformer. The transformer transforms the input supply voltage into a low voltage range that is suitable for crystal growth, and at the same time, electromagnetically couples out multiple sets of outputs to satisfy the multistage structure of the crystal growth furnace.

For mono-crystal growth furnaces, the transformer's secondary output uses 6 independent power conditioning modules (PRMs) to heat the crystals in the growth furnace, due to the 6-stage structure, and for the polycrystalline synthesis furnace, because the furnace has a 9-stage structure, the transformer secondary output uses 9 sets of independent power conditioning modules to heat the crystal load in the synthesis furnace.

The single-closed-loop (temperature closed loop) or double closed loop (current inner loop, temperature outer loop) controls and adjusts the duty cycle of the power semiconductor devices in each power conditioning module, thereby changing the output power of the power conditioning module, so that the various sections of the furnace body's temperature reaches the process requirements for crystal growth.

Gas Gallium Arsenide Introduction

As the second generation of semiconductor, GaAs crystal is known as "Semiconductor Noble", it is widely used in mobile phones, computer peripherals, remote controllers, lighting optoelectronic fields etc. Due to its electron mobility that is 6 times higher than silicon, GaAs has become a necessity for ultra high speed, ultra high frequency devices and integrated circuits. It is also widely used in military field, and is an important material for laser missiles.

Gas Gallium Arsenide Power Supply Parameters

  • 3 phase 220V, 380V, 480V, 600V (+-10%) AC input, 50Hz/60Hz
  • DC output 12KW for 6 temperature sections; 18 KW for 9 temperature sections
  • Regulation range: 0-100%
  • Accuracy 1%
  • Efficiency >90%,
  • Constant current /constant voltage mode
  • Cooling mode: Force Air Cooling
  • With protection of overload, over current, over heat, and low voltage, short circuit, etc

  • 16000m2 for headquarters, workshops and office
  • Capacity 1000 sets/month
  • 5S management for production
  • QC rather reliable


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